SemiQ is supplying its GCMX003A120S3B1-N and the GCMX003A120S7B1 QSiC 1200 V SiC half-bridge modules for use in 100 Kw ...

SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.

NoMIS Power claims a breakthrough in the short-circuit withstand time of SiC MOSFETs; opens up new opportunities in high power applications.

For some SiC MOSFETs, which commonly feature higher voltage, lower on-resistance and faster switching characteristics than silicon (Si) MOSFETs, sufficient negative voltage cannot be applied ...

Onsemi has introduced the first generation of its 1200V SiC MOSFET based SPM 31 intelligent power modules (IPMs).

MALVERN, Pa., March 11, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today announced that at the Applied Power Electronics Conference and Exposition (APEC) 2025, the company ...