Upgrades to Keysight’s double-pulse test systems bring easier and even higher-accuracy measurement of dynamic characteristics ...

A 650-V bi-directional GaN IC combined with a high-speed isolated gate driver facilitates this single-stage power conversion.

NEXPERIA e-mode GaN FET portfolio includes 12 new devices intended to address the growing demand for higher efficiency and ...

“We aim to bring to market an ultra-high voltage, reliable GaN product that will give customers more choice when developing power systems. Our 1200-volt GaN FET will enable excellent performance ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

EPC launches the EPC2367 100-V GaN FET with an ultra-low on-resistance and higher efficiency for AI servers, robotics, and automotive power.

Nexperia has announced the addition of 12 new devices to its e-mode GaN FET portfolio to address the growing demand for higher efficiency and more compact systems. The new low and high-voltage e-mode ...