Nissan has announced the development of the first inverter using SiC (Silicon Carbide) diodes for vehicle use. These inverters were first tried on a Nissan X-Trail FCV. According to Nissan ...

The company says this first standard-specification SiC-MOSFET will enable the company to respond to the diversification of inverters for xEVs and contribute to the growing popularity of these vehicles ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for automotive traction ...

Toshiba Electronics Europe has announced early test samples in bare die format of new 1200V SiC MOSFETs with low ...

U.S. multinational automotive supplier BorgWarner and ... the group will create the concept for the entire silicon carbide (SiC)-based inverter system,” BorgWarner explained.

Toshiba has developed a 2,200 V silicon carbide (SiC) MOSFET for inverters and energy storage systems, in order to help inverter manufacturers to reduce the size and weight of their products.

such as automotive traction inverters. Reducing On-resistance in an SiC MOSFET causes excess current flow through the MOSFET during short-circuit [6], reducing short-circuit durability.