The main purpose of this application report is to demonstrate a systematic approach to design high performance gate drive circuits for high speed switching applications. It is an informative …

Paralleling IGBTs become necessary for power conversion equipment with higher output power ratings, where a single IGBT cannot provide the required load current. This TI Design …

IGBT / MOSFET DRIVE BASICS 2.1 Gate vs Base Power MOSFETs and IGBTs are simply voltage driven switches, because their insulated gate behaves like a capacitor.

Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs for use with both silicon and wide …

Renesas Gate Driver IC (GDU) is used to drive inverters that convert DC power from battery into three-phase AC power to drive motors. The high voltage side consists of a motor, a high …

IGBT drive conditions and main characteristics are shown below. An IGBT’s main characteristics change according to the values of VGE and RG, so it is important to use settings appropriate …

Ultrafast IGBT and MOSFET gate driver ICs ensure solid state switches perform efficiently. Littelfuse makes several integrated circuits to control gates on insulated-gate bipolar transistor …

•The input gate side of IGBT has a similar MOS structure like that of a MOSFET and hence IGBT and MOSFET gate drive circuits are very similar. •The difference is the dynamic latch up that …

If you would like to drive an IGBT module with 0.5Ω external turn-on gate resistance and 0.2Ω module internal resistance at a gate voltage swing of 25V (+15 / 10V), the gate driver must be …

When high off-state dv/dt is not present, the IGBT can be driven like a MOSFET using any of the gate drive circuits from switching power supplies. Normally 15V is applied gate to emitter …